Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA108DJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA108DJ-T1-GE3
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 80 V |
| Threshold Voltage | 4V@250μA |
| Gate Charge | 13nC@10V |
| Power | 3.5W, 19W |
| Input Capacitance | 545pF@40V |
| Continuous Drain Current | 6.6A, 12A |
| On-Resistance | 38mΩ@4A,10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 12,653
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.0026 | |
| 50+ | $ 0.8327 | |
| 100+ | $ 0.6629 | |
| 500+ | $ 0.4693 | |
| 1500+ | $ 0.4609 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA110DJ-T1-GE3
--
VISHAY
SIA400EDJ-T1-GE3
MOSFET 30V 12A 19.2W 19mOhms @ 4.5V
VISHAY
SIA413DJ-T1-GE3
表面贴装型-P-通道-12V-12A（Tc）-3.5W（Ta）-19W（Tc）-PowerPAK®-SC-70-6-单
VISHAY
SIA414DJ-T1-GE3
MOSFET 8.0V 12A 19W 11mohm @ 4.5V
VISHAY
