Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA4263DJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA4263DJ-T1-GE3
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 7.5 A |
| Threshold Voltage | 1V |
| Type | MOSFET |
| Power | 3.29W |
| Gate Charge | 19.8nC |
| On-Resistance | 19.9mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3537 | |
| 10+ | $ 0.3454 | |
| 30+ | $ 0.3412 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA4265EDJ-T1-GE3
--
VISHAY
SIA427ADJ-T1-GE3
MOSFET 8V 12A 19W
VISHAY
SIA427ADJ-T1-GE3
场效应管(MOSFET) 19W 8V 12A 1个P沟道 SC-70-6
VISHAY
SIA427ADJ-T1-GE3
MOSFET 8V 12A 19W
VISHAY
