Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA519EDJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA519EDJ-T1-GE3
Description
MOSFET 20V 4.5A/4.5A N&P-CH MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.4V @ 250µA |
| Continuous Drain Current | 4.5A |
| On-Resistance | 40mΩ@4.2A, 4.5V |
| Power | 7.8 W |
| Input Capacitance | 350pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 187,248
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.5290 | |
| 10+ | $ 0.9553 | |
| 100+ | $ 0.6197 | |
| 500+ | $ 0.4749 | |
| 1000+ | $ 0.4289 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA527DJ-T1-GE3
MOSFET 12V 29mOhm@4.5V 4.5A N-CH
VISHAY
SIA527DJ-T1-GE3
场效应管(MOSFET) 7.8W 12V 4.5A 1个N沟道+1个P沟道 PowerPAK-SC-70-6
VISHAY
SIA527DJ-T1-GE3
MOSFET 12V 29mOhm@4.5V 4.5A N-CH
VISHAY
SIA527DJ-T1-GE3
场效应管(MOSFET) 7.8W 12V 4.5A 1个N沟道+1个P沟道 PowerPAK-SC-70-6
VISHAY
