Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA533EDJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA533EDJ-T1-GE3
Description
MOSFET-阵列-N-和-P-沟道-12V-4.5A-7.8W-表面贴装型-PowerPAK®-SC-70-6-双
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Threshold Voltage | 1V@250µA |
| Drain-Source Voltage | 12V |
| Continuous Drain Current | 4.5A |
| On-Resistance | 34mΩ @ 4.6A, 4.5V |
| Power | 7.8 W |
| Input Capacitance | 420pF@6V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 383
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3676 | |
| 10+ | $ 0.3579 | |
| 30+ | $ 0.3523 | |
| 100+ | $ 0.3384 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA537EDJ-T1-GE3
MOSFET 12V .028ohm@4.5V 4.5A N-CH
VISHAY
SIA537EDJ-T1-GE3
MOSFET-阵列-N-和-P-沟道-12V-20V-4.5A-7.8W-表面贴装型-PowerPAK®-SC-70-6-双
VISHAY
SIA811ADJ-T1-GE3
MOSFET 20V 4.5A 6.5W
VISHAY
SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A SC-70-6
VISHAY
