Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA910EDJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA910EDJ-T1-GE3
Description
MOSFET 12V 4.5A/4.5A N-CH DUAL MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 1V@250µA |
| Type | Dual N-Channel |
| Drain-Source Voltage | 12V |
| Continuous Drain Current | 4.5A |
| Power | 7.8 W |
| On-Resistance | 28mΩ@5.2A，4.5V |
| Input Capacitance | 455 pF @ 6 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 24,854
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6516 | |
| 10+ | $ 1.0319 | |
| 100+ | $ 0.6726 | |
| 500+ | $ 0.5166 | |
| 1000+ | $ 0.4665 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA913ADJ-T1-GE3
MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V
VISHAY
SIA918EDJ-T1-GE3
Trans MOSFET N-CH 30V 4.4A 6-Pin PowerPAK SC-70 EP T/R
VISHAY
SIA921EDJ-T1-GE3
MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V
VISHAY
SIA921EDJ-T1-GE3
MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V
VISHAY
