Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIA923EDJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA923EDJ-T1-GE3
Description
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | 2 P-channel (Dual) |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.4V @ 250µA |
| Continuous Drain Current | 4.5A |
| Power | 7.8 W |
| On-Resistance | 54mΩ@3.8A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 14,233
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3816 | |
| 100+ | $ 0.3022 | |
| 750+ | $ 0.2660 | |
| 1500+ | $ 0.2493 | |
| 3000+ | $ 0.2353 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA928DJ-T1-GE3
MOSFET Dual N-Chan 30V PowerPAK SC-70
VISHAY
SIA929DJ-T1-GE3
MOSFET -30 Volts 4.5 Amps 7.8 Watts
VISHAY
SIA929DJ-T1-GE3
MOSFET -30 Volts 4.5 Amps 7.8 Watts
VISHAY
SiA929DJ-T1-GE3-VB
--
Vbsemi
