Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHB24N80AE-GE3
Manufacturer
VISHAYManufacturer Product Number
SIHB24N80AE-GE3
Description
场效应管(MOSFET) 208W 800V 21A 1个N沟道 D2PAK(TO-263)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 21A |
| Power | 208W |
| Gate Charge | 89nC@10V |
| On-Resistance | 184mΩ@10A, 10V |
| Input Capacitance | 1836pF@100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 105
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.5024 | |
| 10+ | $ 2.1403 | |
| 30+ | $ 1.9134 | |
| 100+ | $ 1.6460 | |
| 500+ | $ 1.5429 | |
| 1000+ | $ 1.4984 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SIHB25N50E-GE3
--
VISHAY
SIHB25N50E-GE3
SIHB25N50E Series 500 V 26 A Surface Mount Power MOSFET - D2PAK (TO-263)
VISHAY
SIHB28N60EF-T1-GE3
N-CHANNEL 600V
VISHAY
SIHB28N60EF-T5-GE3
N-CHANNEL 600V
VISHAY
