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SIHD2N80E-GE3
Manufacturer
VISHAYManufacturer Product Number
SIHD2N80E-GE3
Description
场效应管(MOSFET) 62.5W 800V 2.8A 1个N沟道 TO-252AA
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 2.8A |
| Power | 62.5W |
| On-Resistance | 2.75Ω@1A,10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 918
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7506 | |
| 10+ | $ 0.6754 | |
| 30+ | $ 0.6350 | |
| 75+ | $ 0.5890 | |
| 525+ | $ 0.5682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIHD4N80E-GE3
表面贴装 N 沟道 800V 4.3A（Tc） 69W（Tc） D-PAK（TO-252AA）
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