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SIHG20N50E-GE3
Manufacturer
VISHAYManufacturer Product Number
SIHG20N50E-GE3
Description
Vishay E Series 系列 N沟道 Si MOSFET SIHG20N50E-GE3, 19 A, Vds=500 V, 3引脚 TO-247AC封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 500V |
| On-Resistance | 184mΩ@10A, 10V |
| Continuous Drain Current | 19A |
| Power | 179W |
| Gate Charge | 92nC@10V |
| Input Capacitance | 1640pF@100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 232
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.1066 | |
| 2+ | $ 3.9117 | |
| 5+ | $ 3.4786 | |
| 10+ | $ 3.0789 | |
| 20+ | $ 2.6918 | |
| 100+ | $ 2.4634 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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AVAILABLE Q4/2015
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