Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIR4606DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIR4606DP-T1-GE3
Description
N-CHANNEL 60 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Continuous Drain Current | 10.5 A, 16 A |
| Power | 3.7 W, 31.2 W |
| Gate Charge | 13.5 nC @ 10 V |
| On-Resistance | 18.5 mΩ @ 4 A, 10 V |
| Input Capacitance | 540 pF @ 30 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SIR460DP-T1-GE3
场效应管(MOSFET) 5W；48W 30V 40A 1个N沟道 PowerPAK-SO-8
VISHAY
SIR462DP-T1-GE3
MOSFET N-CH 30V 30A PPAK SO-8
VISHAY
SIR462DP-T1-GE3
场效应管(MOSFET) 4.8W；41.7W 30V 30A 1个N沟道 PowerPAK-SO-8
VISHAY
SIR464DP-T1-GE3
场效应管(MOSFET) 5.2W；69W 30V 50A 1个N沟道 PowerPAK-SO-8
VISHAY
