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SIR606BDP-T1-RE3
Manufacturer
VISHAYManufacturer Product Number
SIR606BDP-T1-RE3
Description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Gate Charge | 30nC@10V |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 5W,62.5W |
| Continuous Drain Current | 10.9A, 38.7A |
| On-Resistance | 17.4mΩ@10A, 10V |
| Input Capacitance | 1470pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 51
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9052 | |
| 10+ | $ 0.8829 | |
| 30+ | $ 0.8676 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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