Manufacturer
VISHAYManufacturer Product Number
SIR632DP-T1-RE3
Description
Vishay N沟道 MOSFET SIR632DP-T1-RE3, 29 A, Vds=150 V, 8引脚 SO封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Vishay N沟道 MOSFET SIR632DP-T1-RE3, 29 A, Vds=150 V, 8引脚 SO封装
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 29A |
| Power | 69.5W |
| Gate Charge | 17nC@7.5V |
| On-Resistance | 34.5mΩ@10A,10V |
| Input Capacitance | 740pF@75V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.4942 | |
| 50+ | $ 1.2728 | |
| 100+ | $ 1.0514 | |
| 500+ | $ 0.7854 | |
| 1500+ | $ 0.7701 |
Minimum:1/Multiple:1
Total amount: