Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIR632DP-T1-RE3
Manufacturer
VISHAYManufacturer Product Number
SIR632DP-T1-RE3
Description
Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 29A |
| Power | 69.5W |
| Gate Charge | 17nC@7.5V |
| On-Resistance | 34.5mΩ@10A，10V |
| Input Capacitance | 740pF@75V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,569
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9650 | |
| 100+ | $ 0.7965 | |
| 750+ | $ 0.7311 | |
| 1500+ | $ 0.6893 | |
| 3000+ | $ 0.6573 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SIR638ADP-T1-RE3
场效应管(MOSFET) 104W 40V 100A 1个N沟道 PowerPAK-SO-8
VISHAY
SIR638ADP-T1-RE3
表面贴装 N 沟道 40V 100A（Tc） 104W（Tc） PowerPAK® SO-8
VISHAY
SIR638DP-T1-GE3
40V 100A 0.00088 Ohm N-Ch PowerPak SO-8
VISHAY
SIR640ADP-T1-GE3
MOSFET 40V 2mOhm@10V 60A N-CH
VISHAY
