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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS412DN-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SIS412DN-T1-GE3

Description

场效应管(MOSFET) 3.2W；15.6W 30V 12A 1个N沟道 PowerPAK1212-8

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 3.2W；15.6W 30V 12A 1个N沟道 PowerPAK1212-8

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Threshold Voltage	2.5 V @ 250 μA
Type	N-Channel
Drain-Source Voltage	30V
Continuous Drain Current	12A
Gate Charge	12nC@10V
Power	3.2W, 15.6W
On-Resistance	24mΩ
Input Capacitance	435pF@15V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 5,773

Quantity	Unit Price	Ext Price
1+	$ 0.4052
100+	$ 0.3231
750+	$ 0.2855
1500+	$ 0.2674
3000+	$ 0.2507

Price For：Each

Minimum:1/Multiple:1

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场效应管(MOSFET) 3.7W；52W 30V 18A 1个P沟道 PowerPAK1212-8

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SIS413DN-T1-GE3

MOSFET P-CH 30V 18A PPAK 1212-8

VISHAY