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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISH402DN-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SISH402DN-T1-GE3

Description

场效应管(MOSFET) 52W；3.8W 30V 19A；35A 1个N沟道

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 52W；3.8W 30V 19A；35A 1个N沟道

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	30V
Gate Charge	42 nC @ 10 V
Threshold Voltage	2.2 V @ 250 μA
Power	3.8W, 52W
Input Capacitance	1700 pF @ 15 V
On-Resistance	6mΩ@19A, 10V
Continuous Drain Current	19A, 35A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 25

Quantity	Unit Price	Ext Price
1+	$ 0.6475
10+	$ 0.6350
30+	$ 0.6253

Price For：Each

Minimum:1/Multiple:1

Total amount:

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