Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQ1431EH-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ1431EH-T1_GE3
Description
绝缘栅场效应管（MOSFET） P-CHANNEL 30-V (D-S) 175C MOSFET
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1.5W |
| Input Capacitance | 12pF |
| Drain-Source On-Resistance | 0.28Ω |
| Drain-Source Saturation Current | 0.8 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 434
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6225 | |
| 10+ | $ 0.5013 | |
| 30+ | $ 0.4400 | |
| 100+ | $ 0.3802 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SQ1440EH-T1_GE3
--
VISHAY
SQ1440EH-T1_GE3
表面贴装 N 沟道 60V 1.7A（Tc） 3.3W（Tc） SC-70-6
VISHAY
SQ1440EH-T1_GE3
表面贴装 N 沟道 60V 1.7A（Tc） 3.3W（Tc） SC-70-6
VISHAY
SQ1464EEH-T1_GE3
场效应管(MOSFET) 430mW 60V 440mA 1个N沟道 SC-70-6
VISHAY
