Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQ2318AES-T1_BE3
Manufacturer
VISHAYManufacturer Product Number
SQ2318AES-T1_BE3
Description
MOSFET N-CHANNEL 40V (D-S)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Continuous Drain Current | 8A |
| Power | 3W |
| Drain-Source Voltage | 40V |
| Gate Charge | 13nC@10V |
| On-Resistance | 31mΩ@7.9A, 10V |
| Input Capacitance | 553pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,300
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2618 | |
| 50+ | $ 0.2298 | |
| 150+ | $ 0.2158 | |
| 500+ | $ 0.1991 | |
| 3000+ | $ 0.1922 | |
| 6000+ | $ 0.1880 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQ2318AES-T1_GE3
栅极电压Vgs：±20V Pd-功率耗散(Max)：3W(Tc) Rds On(Max)@Id,Vgs：31mΩ@6A,10V 工作温度：-55°C~175°C(TJ) 封装/外壳：SOT-23
VISHAY
SQ2318AES-T1_GE3
Single N-Channel 40 V 3 W 13 nC Silicon Surface Mount Mosfet - SOT-23
VISHAY
SQ2318AES-T1_GE3
Single N-Channel 40 V 3 W 13 nC Silicon Surface Mount Mosfet - SOT-23
VISHAY
SQ2319ADS-T1_BE3
--
VISHAY
