Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQ2361AEES-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ2361AEES-T1_GE3
Description
P-CH MOS-FET+ESD 2,5A 60V SOT23 RoHSconf
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Power | 2W |
| Continuous Drain Current | 2.8A |
| Gate Charge | 15nC@10V |
| On-Resistance | 170mΩ |
| Input Capacitance | 620pF@30V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6963 | |
| 100+ | $ 0.4275 | |
| 1000+ | $ 0.3523 | |
| 3000+ | $ 0.3147 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQ2361ES-T1_GE3
P-Channel 60 V 0.177 O 12 nC SMT TrenchFET Power Mosfet - SOT-23
VISHAY
SQ2362ES-T1_GE3
N-CH 60V 4,3A 147mOhm SOT-23-3 RoHSconf
VISHAY
SQ2362ES-T1_GE3
场效应管(MOSFET) 3W 60V 4.3A 1个N沟道 SOT-23
VISHAY
SQ2362ES-T1_GE3-HXY
--
HUAXUANYANG
