Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQ2389ES-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ2389ES-T1_GE3
Description
MOSFET P-CHAN 40V SO23
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Power | 3W |
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 4.1A |
| Gate Charge | 12nC@10V |
| On-Resistance | 94mΩ @ 10A, 10V |
| Input Capacitance | 420pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9246 | |
| 100+ | $ 0.6141 | |
| 1000+ | $ 0.3843 | |
| 3000+ | $ 0.3286 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQ2398ES-T1_BE3
MOSFET N-CH 100V 1.6A SOT23-3
VISHAY
SQ2398ES-T1_BE3
场效应管(MOSFET) 2W 100V 1.6A 1个N沟道 SOT-23-3(TO-236-3)
VISHAY
SQ2398ES-T1_GE3
表面贴装 N 沟道 100V 1.6A（Tc） 2W（Tc） SOT-23-3（TO-236）
VISHAY
SQ2398ES-T1_GE3
表面贴装 N 沟道 100V 1.6A（Tc） 2W（Tc） SOT-23-3（TO-236）
VISHAY
