Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQJ142EP-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQJ142EP-T1_GE3
Description
场效应管(MOSFET) 191W 40V 167A 1个N沟道 SO-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Threshold Voltage | 3.5V@250µA |
| Drain-Source Voltage | 40V |
| Gate Charge | 45nC@10V |
| Continuous Drain Current | 167A |
| Power | 191W |
| On-Resistance | 3.6mΩ@15A，10V |
| Input Capacitance | 2650pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,160
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5765 | |
| 10+ | $ 0.5166 | |
| 30+ | $ 0.4860 | |
| 100+ | $ 0.4568 | |
| 500+ | $ 0.4373 | |
| 1000+ | $ 0.4289 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQJ144EP-T1_GE3
--
VISHAY
SQJ146ELP-T1_GE3
--
VISHAY
SQJ147ELP-T1_GE3
--
VISHAY
SQJ147ELP-T1_GE3
场效应管(MOSFET) 183W 40V 90A 1个P沟道 PowerPAK-SO-8
VISHAY
