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SUD19P06-60-E3
Manufacturer
VISHAYManufacturer Product Number
SUD19P06-60-E3
Description
场效应管(MOSFET) 38.5W；2.3W 60V 18.3A 1个P沟道 TO-252
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 0.12 Ω |
| Drain-Source Saturation Current | 19 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 826
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7729 | |
| 10+ | $ 0.6963 | |
| 30+ | $ 0.6559 | |
| 100+ | $ 0.6071 | |
| 500+ | $ 0.5863 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSUD19P06-60-GE3
MOSFET 60V 19A 38.5W 60mohm @ 10V
VISHAY
SUD19P06-60-GE3
场效应管(MOSFET) 2.3W；38.5W 60V 18.3A 1个P沟道 TO-252(DPAK)
VISHAY
SUD19P06-60-GE3-HXY
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HUAXUANYANG
SUD19P06-60L-E3
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VISHAY
