Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Si4943CDY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
Si4943CDY-T1-GE3
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 3 V @ 250 µA |
| Type | 2 P-channel (Dual) |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 8A |
| Operating Temperature | -50℃~150℃ |
| Power | 3.1W |
| Input Capacitance | 1945pF @ 10V |
| On-Resistance | 19.2mΩ @ 8.3A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 129
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.4399 | |
| 10+ | $ 1.2867 | |
| 30+ | $ 1.1948 | |
| 100+ | $ 1.0959 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4943DY-T1-E3-VB
--
Vbsemi
SI4946BEY
--
TECH PUBLIC
SI4946BEY-T1-E3-VB
--
Vbsemi
SI4946BEY-T1-GE3
场效应管(MOSFET) 3.7W 60V 6.5A 2个N沟道 SOIC-8
VISHAY
