Manufacturer
VbsemiManufacturer Product Number
SI2302DS-T1-GE3-VB
Description
MOS场效应管 SI2302DS-T1-GE3-VB SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
MOS场效应管 SI2302DS-T1-GE3-VB SOT-23
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250μA |
| Continuous Drain Current | 6A |
| Power | 2.1W |
| Reverse Transfer Capacitance | 55pF@10V |
| Input Capacitance | 865pF@10V |
| Gate Charge | 8.8nC @ 4.5V |
| On-Resistance | 28mΩ@4.5V,5A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0446 | |
| 200+ | $ 0.0279 | |
| 1500+ | $ 0.0251 | |
| 3000+ | $ 0.0209 |
Minimum:1/Multiple:1
Total amount: