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MMDT3906
Manufacturer
YANGJIEManufacturer Product Number
MMDT3906
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 200 mW |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Ji She Ji Ji Chuan Voltage（vceo） | 40V |
| Ji Dian Ji Jie Zhi Current（icbo） | 50 nA |
| Te Zheng Frequency | 250MHz |
| Jing Ti Guan Type | PNP |
| Ji Dian Ji Current（ic） | 200mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 400mV @ 50mA, 5mA |
| DC Gain (hFE@Ic, Vce) | 100 @ 10mA, 1V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 80
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0348 | |
| 200+ | $ 0.0279 | |
| 600+ | $ 0.0237 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllMMDT3906-7-F
MMDT3906 Series Dual PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363
Diodes
MMDT3906-7-F
三极管(BJT) 200mW 40V 200mA PNP SOT-363
Diodes
MMDT3906-LS
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Diodes
MMDT3906DW
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