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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HYG006N04LS1TA

Manufacturer

HUAYI MICROELECTRONICS

Manufacturer Product Number

HYG006N04LS1TA

Description

场效应管(MOSFET) 428W 40V 600A 1个N沟道 TOLL

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 428W 40V 600A 1个N沟道 TOLL

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Type	1 N-channel
Threshold Voltage	1.8V@250μA
Drain-Source Voltage	40V
Gate Charge	230nC@10V
Operating Temperature	-55℃ ~ +175℃
Power	428W
Continuous Drain Current	600 A
Reverse Transfer Capacitance	115pF@25V
On-Resistance	0.45mΩ@10V,80A
Input Capacitance	15.4nF@25V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,324

Quantity	Unit Price	Ext Price
1+	$ 1.3160
10+	$ 1.2032
30+	$ 1.1433
100+	$ 0.8717
500+	$ 0.8411
1000+	$ 0.8272

Price For：Each

Minimum:1/Multiple:1

Total amount:

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