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HYG025N06LS1C2

Manufacturer

HUAYI MICROELECTRONICS

Manufacturer Product Number

HYG025N06LS1C2

Description

场效应管(MOSFET) 130W 60V 170A 1个N沟道 DFN-8(5.2x5.9)

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 130W 60V 170A 1个N沟道 DFN-8(5.2x5.9)

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Type 1 N-channel
Drain-Source Voltage 60 V
Power 130W
Threshold Voltage 2.1 V @ 250 μA
Continuous Drain Current 170A
On-Resistance 2.1 mΩ @ 10 V, 20 A
Reverse Transfer Capacitance 10.2pF@25V
Input Capacitance 3.915nF@25V
Gate Charge 28.2nC@10V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 1,555

Quantity Unit Price Ext Price
1+ $ 0.5723
10+ $ 0.4637
30+ $ 0.4094
100+ $ 0.3607
500+ $ 0.2785
1000+ $ 0.2702
Price For:Each

Minimum:1/Multiple:1

Total amount:

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