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HYG053N10NS1B
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG053N10NS1B
Description
场效应管(MOSFET) 187.5W 100V 120A 1个N沟道 TO-263-2
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 3V @ 250μA |
| Drain-Source Voltage | 100 V |
| Operating Temperature | -55℃ ~ +175℃ |
| Continuous Drain Current | 120 A |
| Gate Charge | 70nC@10V |
| Power | 187.5W |
| Reverse Transfer Capacitance | 76pF@25V |
| On-Resistance | 4.8mΩ@10V, 50A |
| Input Capacitance | 4.036nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,020
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4721 | |
| 10+ | $ 0.3802 | |
| 30+ | $ 0.3412 | |
| 100+ | $ 0.2924 | |
| 500+ | $ 0.2479 | |
| 800+ | $ 0.2339 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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