Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
HYG055N08NS1P
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG055N08NS1P
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 3V @ 250μA |
| Drain-Source Voltage | 80 V |
| Operating Temperature | -55℃ ~ +175℃ |
| Continuous Drain Current | 120 A |
| On-Resistance | 5.3 mΩ @ 10 V, 50 A |
| Reverse Transfer Capacitance | 15pF @ 25V |
| Gate Charge | 60nC@10V |
| Power | 187.5W |
| Input Capacitance | 3.66nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6545 | |
| 10+ | $ 0.5459 | |
| 50+ | $ 0.4874 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
HYG060N08NS1B
--
HUAYI MICROELECTRONICS
HYG060N08NS1D
场效应管(MOSFET) 75W 80V 80A 1个N沟道 TO-252-2
HUAYI MICROELECTRONICS
HYG064N08NA1B
--
HUAYI MICROELECTRONICS
HYG064N08NA1P
--
HUAYI MICROELECTRONICS
