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HYG110P04LQ2C2
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG110P04LQ2C2
Description
场效应管(MOSFET) 62.5W 40V 55A 1个P沟道 PDFN-8(5.9x5.2)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 P-Channel |
| Continuous Drain Current | 55 A |
| Threshold Voltage | 1.6V @ 250μA |
| Drain-Source Voltage | 40V |
| Operating Temperature | -55℃ ~ +175℃ |
| Gate Charge | 76 nC @ 10 V |
| Power | 62.5W |
| Reverse Transfer Capacitance | 140pF@25V |
| On-Resistance | 9mΩ@10V,20A |
| Input Capacitance | 4.468nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2632 | |
| 50+ | $ 0.2103 | |
| 150+ | $ 0.1880 | |
| 500+ | $ 0.1588 | |
| 2500+ | $ 0.1365 | |
| 5000+ | $ 0.1295 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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