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HYG200P10LR1P
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG200P10LR1P
Description
场效应管(MOSFET) 214W 100V 80A 1个P沟道 TO-220FB-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 100 V |
| Type | 1 P-Channel |
| Continuous Drain Current | 80A |
| Threshold Voltage | 1.8V@250μA |
| Power | 214 W |
| Gate Charge | 83nC @ 10V |
| Reverse Transfer Capacitance | 91pF @ 50V |
| On-Resistance | 20mΩ @ 10V, 40A |
| Input Capacitance | 11.52nF @ 50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,952
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7450 | |
| 10+ | $ 0.6071 | |
| 50+ | $ 0.5138 | |
| 100+ | $ 0.4470 | |
| 500+ | $ 0.4066 | |
| 1000+ | $ 0.3871 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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