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BSN20BKR-HXY
Manufacturer
HUAXUANYANGManufacturer Product Number
BSN20BKR-HXY
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Power | 350mW |
| Continuous Drain Current | 300 mA |
| On-Resistance | 2Ω@10V,0.3A |
| Threshold Voltage | 1.9V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 220
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0209 | |
| 200+ | $ 0.0167 | |
| 600+ | $ 0.0139 | |
| 3000+ | $ 0.0111 | |
| 9000+ | $ 0.0097 | |
| 21000+ | $ 0.0097 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSN20Q-7
场效应管(MOSFET) 600mW；920mW 50V 500mA 1个N沟道 SOT-23-3
Diodes
BSN20Q-7
MOSFET NCH 50V 500MA SOT23
Diodes
BSO033N03MSGXUMA1
晶体管: N-MOSFET; 单极; 30V; 22A; 1.56W; PG-DSO-8; OptiMOS™ 3
Infineon
BSO040N03MS G
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Infineon
