Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MS10N120HGT1
Manufacturer
MASPOWERManufacturer Product Number
MS10N120HGT1
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Continuous Drain Current | 10A |
| Drain-Source Voltage | 1.2kV |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 39
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.7823 | |
| 10+ | $ 2.3464 | |
| 50+ | $ 2.0874 | |
| 100+ | $ 1.8256 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MS10N40HGT0
--
MASPOWER
MS10N60FT
--
MASPOWER
MS10N65F
此款N沟道MOSFET采用TO-220F封装，漏源电压(Vdss)：650V，漏极电流(Id)：10A具有低导通电阻和快速开关功能，漏源导通电阻 (RDS(on))：0.95Ω@ VGS=10V，可适用于开关电源、电机驱动、LED照明、电池管理系统、消费类电子产品等，满足你的电路设计需求
MSKSEMI
MS1100A2
--
RELMON
