Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AOD66920
Manufacturer
AOSManufacturer Product Number
AOD66920
Description
Transistor: N-MOSFET; unipolar
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Type | N-channel |
| Gate Charge | 50nC@10V |
| Drain-Source Voltage | 100 V |
| Input Capacitance | 2500pF@50V |
| On-Resistance | 8.2 mΩ @ 20 A, 10 V |
| Continuous Drain Current | 19.5A,70A |
| Power | 6.2W,89W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 48
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8606 | |
| 10+ | $ 0.6977 | |
| 30+ | $ 0.6169 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllAOD66923
场效应管(MOSFET) 6.2W；73W 100V 16.5A；58A 1个N沟道 TO-252-2
AOS
AOD66923
表面贴装 N 沟道 100V 16.5A (Ta), 58A (Tc) 6.2W (Ta), 73W (Tc) TO-252（DPAK）
AOS
AOD66923-HXY
--
HUAXUANYANG
AOD6B60M1
Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ
AOS
