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DMN10H099SK3-13
Manufacturer
DiodesManufacturer Product Number
DMN10H099SK3-13
Description
场效应管(MOSFET) 34W 100V 17A 1个N沟道 TO-252
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 17A |
| Drain-Source On-Resistance | 0.08Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3440 | |
| 100+ | $ 0.2618 | |
| 1250+ | $ 0.2270 | |
| 2500+ | $ 0.2145 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN10H100SK3-13
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
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DMN10H100SK3-13
MOSFET 100V N-Ch Enh FET 100mOhm 3V
Diodes
DMN10H100SK3-13
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
Diodes
DMN10H100SK3-13
场效应管(MOSFET) 37W 100V 18A 1个N沟道 TO-252
Diodes
