Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN10H100SK3-13
Manufacturer
DiodesManufacturer Product Number
DMN10H100SK3-13
Description
场效应管(MOSFET) 37W 100V 18A 1个N沟道 TO-252
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 18A |
| Power | 37W |
| Gate Charge | 25.2nC@10V |
| On-Resistance | 80mΩ@3.3A, 10V |
| Input Capacitance | 1172pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,497
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3189 | |
| 100+ | $ 0.2437 | |
| 1250+ | $ 0.2103 | |
| 2500+ | $ 0.1991 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMN10H120SE-13
场效应管(MOSFET) 1.3W 100V 3.6A 1个N沟道 SOT-223-3
Diodes
DMN10H120SE-13
Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Diodes
DMN10H120SFG-13
Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Diodes
DMN10H120SFG-13
DiodesZetex Si N沟道 MOSFET DMN10H120SFG-13, 5.3 A, Vds=100 V, 8引脚 POWERDI3333封装
Diodes
