Manufacturer
InfineonManufacturer Product Number
BFR106E6327
Description
晶体管: NPN; 双极; 16V; 210mA; 700mW; SOT23
Manufacturer Standard Lead Time
10-15
Detailed Description
晶体管: NPN; 双极; 16V; 210mA; 700mW; SOT23
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 700mW |
| Jing Ti Guan Type | - |
| Ji Dian Ji Current(ic) | 210mA |
| Te Zheng Frequency | 5GHz |
| Ji Dian Ji Jie Zhi Current(icbo) | 1nA |
| Ji She Ji Ji Chuan Voltage(vceo) | 16V |
| DC Gain (hFE@Ic, Vce) | 100@70mA,8V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3551 | |
| 5+ | $ 0.2924 | |
| 10+ | $ 0.2590 | |
| 25+ | $ 0.2200 | |
| 50+ | $ 0.1963 | |
| 100+ | $ 0.1769 | |
| 250+ | $ 0.1588 | |
| 500+ | $ 0.1476 | |
| 1000+ | $ 0.1420 | |
| 3000+ | $ 0.1351 |
Minimum:1/Multiple:1
Total amount:
BFR106E6327HTSA1
BFR106 Series 15 V 210 mA Low Noise Silicon Bipolar RF Transistor - PG-SOT23-3
Infineon