Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC010NE2LSATMA1
Manufacturer
InfineonManufacturer Product Number
BSC010NE2LSATMA1
Description
场效应管(MOSFET) 96W；2.5W 25V 39A；100A 1个N沟道 TDSON-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Type | N-Channel |
| Drain-Source Voltage | 25 V |
| Continuous Drain Current | 39A (Ta), 100A (Tc) |
| Power | 2.5W (Ta), 96W (Tc) |
| Gate Charge | 64 nC @ 10 V |
| On-Resistance | 1 mΩ @ 30A, 10V |
| Threshold Voltage | 2V @ 250µA |
| Input Capacitance | 4700 pF @ 12 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7283 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC010NE2LSI
场效应管(MOSFET) BSC010NE2LSI TDSON-8-EP(5x6)
Infineon
BSC010NE2LSIATMA1
N-Channel 25 V 1.05 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Infineon
BSC010NE2LSIATMA1
N-Channel 25 V 1.05 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Infineon
BSC011N03LS
场效应管(MOSFET) 2.5W 30V 37A 1个N沟道 TDSON-8-EP(5x6)
Infineon
