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BSC018NE2LSATMA1
Manufacturer
InfineonManufacturer Product Number
BSC018NE2LSATMA1
Description
N-Channel 25 V 1.8 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 39 nC @ 10 V |
| Drain-Source Voltage | 25V |
| Power | 2.5 W, 69 W |
| Continuous Drain Current | 29 A, 100 A |
| On-Resistance | 1.8mΩ @ 30A, 10V |
| Input Capacitance | 2800pF@12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,732
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.1445 | |
| 10+ | $ 1.3605 | |
| 100+ | $ 0.9093 | |
| 500+ | $ 0.7325 | |
| 1000+ | $ 0.6002 | |
| 5000+ | $ 0.5459 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC018NE2LSI-HXY
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BSC018NE2LSIATMA1
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