Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC027N10NS5ATMA1
Manufacturer
InfineonManufacturer Product Number
BSC027N10NS5ATMA1
Description
MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 111nC @ 10V |
| Continuous Drain Current | 23A, 100A |
| On-Resistance | 2.7mΩ @ 50A, 10V |
| Power | 3W, 214W |
| Threshold Voltage | 3.8V@146µA |
| Input Capacitance | 8200pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 9,390
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 10.2324 | |
| 10+ | $ 6.8276 | |
| 100+ | $ 4.8962 | |
| 500+ | $ 4.4910 | |
| 1000+ | $ 4.3614 | |
| 2500+ | $ 4.3252 | |
| 5000+ | $ 4.1957 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC028N06LS3 G
--
Infineon
BSC028N06LS3 G
DISCRETE_MOSFET_POWER MOSFET
Infineon
BSC028N06LS3GATMA1
N-Channel 60 V 2.8 mOhm OptiMOS�3 Power-MOSFET - PG-TDSON-8
Infineon
BSC028N06NS
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSC028N06NS, 100 A, Vds=60 V, 8引脚 TDSON封装
Infineon
