Manufacturer
InfineonManufacturer Product Number
IDH04G65C5XKSA2
Description
DIODE SCHOTTKY 650V 4A TO220-2-1
Manufacturer Standard Lead Time
3-5
Detailed Description
DIODE SCHOTTKY 650V 4A TO220-2-1
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Er Ji Guan Pei Zhi | SINGLE |
| Operating Temperature | 0℃~100℃ |
| Ping Jun Zheng Liu Current | 4A |
| Fan Xiang Nai Ya | 650V |
| Zheng Xiang Ya Jiang | 1.7V |
| Fan Xiang Current | 70µA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1419 |
Minimum:1/Multiple:1
Total amount:
IDH04G65C6XKSA1
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innov
Infineon