Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMBF170R1K0M1XTMA1
Manufacturer
InfineonManufacturer Product Number
IMBF170R1K0M1XTMA1
Description
碳化硅MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Continuous Drain Current | 5.2A |
| Power | 68W |
| Drain-Source Voltage | 1700V |
| Gate Charge | 5nC @ 12V |
| On-Resistance | 1000mΩ @ 1A, 15V |
| Threshold Voltage | 5.7V @ 1.1mA |
| Input Capacitance | 275pF @ 1000V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,710
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 6.4948 | |
| 10+ | $ 4.2932 | |
| 100+ | $ 3.2279 | |
| 500+ | $ 2.9257 | |
| 1000+ | $ 2.4077 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIMBF170R450M1XTMA1
--
Infineon
IMBF170R650M1XTMA1
--
Infineon
IMBF170R650M1XTMA1
MOSFET SIC DISCRETE
Infineon
IMBF170R650M1XTMA1
--
Infineon
