Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMBG65R048M1HXTMA1
Manufacturer
InfineonManufacturer Product Number
IMBG65R048M1HXTMA1
Description
--
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 45A |
| Gate Charge | 33nC @ 18V |
| On-Resistance | 64mΩ @ 20.1A, 18V |
| Threshold Voltage | 5.7V @ 6mA |
| Input Capacitance | 1118pF@400V |
| Power | 183W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 10.2241 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIMBG65R057M1HXTMA1
--
Infineon
IMBG65R107M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon
IMBG65R107M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon
IMBG65R107M1HXTMA1
--
Infineon
