Manufacturer
InfineonManufacturer Product Number
IPD050N03LGATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 50A; 68W; PG-TO252-3; OptiMOS™ 3
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Gate Charge | 31 nC @ 10 V |
| Continuous Drain Current | 50A |
| Power | 68W |
| On-Resistance | 5mΩ@30A,10V |
| Input Capacitance | 3200 pF @ 15 V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.7114 | |
| 10+ | $ 1.0792 | |
| 100+ | $ 0.7158 | |
| 500+ | $ 0.5598 | |
| 1000+ | $ 0.5097 |
Minimum:1/Multiple:1
Total amount: