Manufacturer
InfineonManufacturer Product Number
IPN50R1K4CEATMA1
Description
Infineon CoolMOS CE 系列 N沟道 MOSFET IPN50R1K4CEATMA1, 4.8 A, Vds=550 V, 3引脚 SOT-223封装
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 5W |
| Gate-Source Breakdown Voltage | 500V |
| Drain-Source On-Resistance | 1.4Ω |
| Drain-Source Saturation Current | 4.8 A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.5123 | |
| 10+ | $ 0.9400 | |
| 100+ | $ 0.6071 | |
| 500+ | $ 0.4637 | |
| 1000+ | $ 0.4178 |
Minimum:1/Multiple:1
Total amount: