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IPN50R800CEATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPN50R800CEATMA1

Description

Infineon CoolMOS CE 系列 N沟道 MOSFET IPN50R800CEATMA1, 7.6 A, Vds=550 V, 3引脚 SOT-223封装

Manufacturer Standard Lead Time

10-15

Detailed Description

Infineon CoolMOS CE 系列 N沟道 MOSFET IPN50R800CEATMA1, 7.6 A, Vds=550 V, 3引脚 SOT-223封装

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Type N-channel
Operating Temperature -40℃~150℃
Power 5W
Drain-Source Voltage 500V
Gate Charge 12.4 nC @ 10 V
Continuous Drain Current 7.6A
Threshold Voltage 3.5V @ 130µA
Input Capacitance 280pF @ 100V
On-Resistance 800 mΩ @ 1.5 A, 13 V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 822

Quantity Unit Price Ext Price
1+ $ 1.0862
10+ $ 0.6851
100+ $ 0.4957
500+ $ 0.3816
1000+ $ 0.3105
5000+ $ 0.2855
Price For:Each

Minimum:1/Multiple:1

Total amount:

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