Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPP023N08N5AKSA1
Manufacturer
InfineonManufacturer Product Number
IPP023N08N5AKSA1
Description
晶体管: N-MOSFET; 单极; 80V; 120A; 375W; PG-TO220-3; OptiMOS™ 5
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Drain-Source Voltage | 80 V |
| Continuous Drain Current | 120 A |
| On-Resistance | 2.3mΩ@100A, 10V |
| Gate Charge | 166nC@10V |
| Threshold Voltage | 3.8V@208µA |
| Input Capacitance | 12100pF@40V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.9800 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPP023N10N5
场效应管(MOSFET) IPP023N10N5 TO-220
Infineon
IPP023N10N5AKSA1
N-Channel 100 V 120 A 2.3 mO 168 nC OptiMOS 5 Power Transistor - TO-220
Infineon
IPP023NE7N3GXKSA1
N-Channel 75 V 120 A 2.3 mO 155 nC OptiMOS 3 Power Transistor - TO-220
Infineon
IPP023NE7N3GXKSA1
N-Channel 75 V 120 A 2.3 mO 155 nC OptiMOS 3 Power Transistor - TO-220
Infineon
