Manufacturer
InfineonManufacturer Product Number
IPP110N20N3 G
Description
DISCRETE_MOSFET_POWER MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
DISCRETE_MOSFET_POWER MOSFET
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Power | 300W |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 88A |
| On-Resistance | 11mΩ@88A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|
Minimum:1/Multiple:1
Total amount: