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2N7002E-T1-E3-MS
Manufacturer
MSKSEMIManufacturer Product Number
2N7002E-T1-E3-MS
Description
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA阈值电压(Vgs(th)@Id)：1.6V@250uA栅极电荷(Qg@Vgs)：3.7nC@10V输入电容(Ciss@Vds)：25.5pF@30V反向传输电容(Crss@Vds)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,650
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 50+ | $ 0.0000 | |
| 500+ | $ 0.0000 | |
| 3000+ | $ 0.0000 | |
| 6000+ | $ 0.0000 | |
| 24000+ | $ 0.0000 | |
| 51000+ | $ 0.0000 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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场效应管(MOSFET) 350mW 60V 240mA 1个N沟道 TO-236
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2N7002E-T1-GE3
MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
VISHAY
2N7002EM3T5G
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台舟
2N7002EM3T5G
类型：N沟道 漏源电压(Vdss)：60V 连续漏极电流(Id)：350mA 功率(Pd)：150mW 导通电阻(RDS(on)@Vgs,Id)：1.5Ω@4.5V,200mA 阈值电压(Vgs(th)@Id)：1.85V@250uA 输入电容(Ciss@Vds)：42pF@10V 工作温度：+150℃@(Tj)
台舟
