Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
GAN190-650FBEZ
Manufacturer
NexperiaManufacturer Product Number
GAN190-650FBEZ
Description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Power | 125W |
| Continuous Drain Current | 11.5A |
| Gate Charge | 2.8 nC @ 6 V |
| On-Resistance | 190 mΩ @ 3.9 A, 6 V |
| Threshold Voltage | 2.5 V @ 12.2 mA |
| Input Capacitance | 96 pF @ 400 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 7.0672 | |
| 10+ | $ 6.9822 | |
| 30+ | $ 6.9251 | |
| 100+ | $ 6.8694 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
GAN3R2-100CBEAZ
--
Nexperia
GAN3R2-100CBEAZ
Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Nexperia
GAN7R0-150LBEZ
--
Nexperia
GAQV1122S
--
GWOKSEMI
