Manufacturer
OnsemiManufacturer Product Number
FDB0260N1007L
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
--
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 200A |
| Gate Charge | 118 nC @ 10 V |
| Power | 3.8W, 250W |
| On-Resistance | 2.6mΩ@27A, 10V |
| Input Capacitance | 8545pF@50V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.7306 | |
| 5+ | $ 10.9329 | |
| 10+ | $ 9.1337 | |
| 50+ | $ 8.4096 | |
| 100+ | $ 7.6868 | |
| 250+ | $ 7.5323 |
Minimum:1/Multiple:1
Total amount:
FDB029N06
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB029N06, 120 A,193 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
Onsemi